GB25XF120K |
RFQ for GB25XF120K |
![]() |
| Product | Manufacturers | Pack | D/C |
| GB25XF120K | - | - | - |
Features |
| • Low VCE (on) Non Punch Through IGBT Technology• Low Diode VF• 10µs Short Circuit Capability• Square RBSOA• HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics• Positive VCE (on) Temperature Coefficient• Ceramic DBC Substrate• Low Stray Inductance Design |
|
Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Breakdown Voltage |
1200 |
V |
|
IC @ TC = 25 |
Continuous Collector Current |
40 |
A |
|
IC @ TC = 80 |
Continuous Collector Current |
25 | |
|
ICM |
Pulsed Collector Current(Ref.Fig.C.T.5) |
80 | |
|
ILM |
Clamped Inductive Load current |
80 | |
| IF @ TC = 25 | Diode Continuous Forward Current |
40 | |
| IF @ TC = 80 | Diode Continuous Forward Current |
25 | |
| IFM | Diode Maximum Forward Current |
80 | |
|
VGE |
Gate-to-Emitter Voltage |
±20 |
V |
|
PD @ TC = 25 |
Maximum Power Dissipation |
198 |
SupplierPost a Buying Lead |